TI中文支持网
TI专业的中文技术问题搜集分享网站

TIDM-02013: TIDM-02013

Part Number:TIDM-02013

Hello! I would like to know if the GaN Mosfet-LMG3522R030QRQSRQ1 in the reference design can be replaced by this one – LMG3522R030RQSR.

Taylor:

您好,

已经收到了您的案例,调查需要些时间,感谢您的耐心等待。

,

FRANK1:

Thank you for contacting TI China E2E forum and choosing our products as part of your solution.Regarding your query, the Electrical Characteristics of LMG3522R030RQSR and LMG3522R030QRQSRQ1 are the same,but Q1 suffix devices are automotive grade.This reference design is used for 7.4-kW EV or HEV Bidirectional Onboard Charger.The BOM of all the devices need to meet the automotive grade.

赞(0)
未经允许不得转载:TI中文支持网 » TIDM-02013: TIDM-02013
分享到: 更多 (0)