TI中文支持网Part Number:BQ40Z80
BQ40z80（26PIN_DSG和29PIN_CHG）驱动充放电MOS管的能力是多大，大约能驱动多少对MOS管？
Star Xu：
您好，请参考下面的内容
If you are talking about driving parallel FETs, what matters is the gate charge (and therefore input capacitance) rather than the number of FETs necessarily. For example, a FET with 20nC gate charge is roughly equivalent to two 10nC FETs in parallel.
In the datasheet, the relevant parameters are the rise and fall time parameters. In this case, the typical rise time for a 4.7nF load is 200us and the fall is 40us. You can compare that to your FET's input capacitance (CISS) to estimate the rise/fall time of your FET.
So the main motivator will need to be the rise and fall times you need for the FETs. It could theoretically drive as many FETs as you want, but if the rise and fall time is >1 second that likely wouldn't work for you.
,
peter zhang72：
您好！可能是我表达的不准确。因为DSG和CHG输出电流的大小以及MOS的CISS节电容决定了开启的时间，但我们在设计的时候还需要考虑DSG和CHG管脚到MOS管的G脚间串个电阻，目前规格书推荐的是4K欧和1K欧。如果DSG和CHG的驱动能力够，我是否可以减小这两个值，因为这个值越大开启的时间等于越长，这个电阻的发热量也会增大。
,
Star Xu：
您好，DSG和CHG管脚到MOS管的G脚间串连的电阻，阻值可以调整，您可以参考下面的内容：
https://www.ti.com/lit/an/slvaf39a/slvaf39a.pdf
e2e.ti.com/…/4118056
