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调试自己画的DM8168时,想用CCS5.4和JTAG调试DDR是否正确,连接板子出现如下错误,怎么办?

CortexA8: Trouble Writing Memory Block at 0x4c000010 on Page 0 of Length 0x4: (Error -2130 @ 0x4C000010) Unable to access device memory. Verify that the memory address is in valid memory. If error persists, confirm configuration, power-cycle board, and/or try more reliable JTAG settings (eg lower TCLK). (Emulation package 5.1.73.0) CortexA8: GEL: Error while executing OnTargetConnect(): target access failed at *((unsigned int *) (0x4C000000+0x10))=(unsigned int) (0x10000000|SDREF) [evm816x.gel:325] at EMIF4P_Init(0x1779C9FE, 0x50608074, 0x009F857F, (0x10001841&0xfffffff), 0x62A73832, 0x00000310) [evm816x.gel:1328] at Setup_DDR() [evm816x.gel:47] at OnTargetConnect(). CortexA8: Failed Software Reset CortexA8: GEL Output: GEL Reset CortexA8: Trouble Writing Memory Block at 0x40308b50 on Page 0 of Length 0x10c: (Error -1204 @ 0x3D5B) Unable to access the DAP. Reset the device, and retry the operation. If error persists, confirm configuration, power-cycle the board, and/or try more reliable JTAG settings (eg lower TCLK). (Emulation package 5.1.73.0) CortexA8: GEL: File: E:\CCS5.4\workspace\evm816x\tests\ddr\Debug\ddr.out: Load failed. CortexA8: Unable to terminate memory download: NULL buffer pointer at 0x3a9f CortexA8: Error: (Error -1204 @ 0x3D5B) Unable to access the DAP. Reset the device, and retry the operation. If error persists, confirm configuration, power-cycle the board, and/or try more reliable JTAG settings (eg lower TCLK). (Emulation package 5.1.73.0) CortexA8: Unable to determine target status after 20 attempts CortexA8: Failed to remove the debug state from the target before disconnecting. There may still be breakpoint op-codes embedded in program memory. It is recommended that you reset the emulator before you connect and reload your program before you continue debugging

Shine:

请问有在gel文件里初始化DDR吗?只是不能访问DDR吗?

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jianqiang liu:

对在gel中初始化的ddr,同一个gel文件好的板子可以用,这个板子出现问题,我试着降低TCLK频率,但是没用,出现错误就是上图

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jianqiang liu:

而且板子从SD卡启动,串口没有任何输出

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jianqiang liu:

是在gel文件初始化的DDR,这个gel文件其他好的板子测试都是可以的,这个板子出问题,我降低TCLK时钟从796M降成400M也没用

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Shine:

好的板子和不好的板子只是有没有焊接SD和串口的区别吗?GEL文件DDR3初始化时有没有提示初始化成功?

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jianqiang liu:

GEL文件DDR3初始化是成功的,如下:
CortexA8: Output:EVM816x DDR2/3 PRCM Init is in progress …..
CortexA8: Output:EVM816x DDR2/3 PRCM Init is Done …..
然后后面就开始出错了,这个板子和好的板子一样,都焊接了SD和串口,而且这个板子之前我调出来过,后面不行了。前面那个帖子的DDR问题是另一块板,和这个的问题不同。

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jianqiang liu:

DDR3初始化完成了,显示CortexA8: Output: EVM816x DDR2/3 PRCM Init is Done …..,后面就出错了,出错为CortexA8: Trouble Writing Memory Block at 0x4c000010 on Page 0 of Length 0x4: (Error -2130 @ 0x4C000010) Unable to access device memory.

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jianqiang liu:

今天调试发现,如果将gel文件中的这两行注释掉,那个错误就消失了,但是DDR的测试程序会一直停在“DDR testing….”

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Shine:

jianqiang liu 说:GEL文件DDR3初始化是成功的,如下: CortexA8: Output: EVM816x DDR2/3 PRCM Init is in progress ….. CortexA8: Output: EVM816x DDR2/3 PRCM Init is Done ….. 然后后面就开始出错了,这个板子和好的板子一样,都焊接了SD和串口,而且这个板子之前我调出来过,后面不行了。前面那个帖子的DDR问题是另一块板,和这个的问题不同。

,

Shine:

今天调试发现,如果将gel文件中的这两行注释掉,那个错误就消失了,但是DDR的测试程序会一直停在“DDR testing….”

,

jianqiang liu:

没有改动过,会不会是时钟问题,晶振我在测试一下

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jianqiang liu:

晶振测试也没有问题

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jianqiang liu:

问题已解决,经过调试发现硬件电路一个排阻坏了,换一个就好了

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Shine:

感谢分享解决方法!

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